IQE006NE2LM5CGATMA1

Infineon Technologies

Produkt-Nr.:

IQE006NE2LM5CGATMA1

Hersteller:

Paket:

IPAK (TO-251AA)

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Datenblatt:

Beschreibung:

MOSFET N-CH 25V 41A/298A IPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5453 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	82.1 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	650mOhm @ 20A, 10V
Supplier Device Package	IPAK (TO-251AA)
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	25 V
Series	OptiMOS™ 5
Power Dissipation (Max)	2.1W (Ta), 89W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	41A (Ta), 298A (Tc)
Vgs (Max)	±16V
Package	Tape & Reel (TR)
Base Product Number	IQE006