IRF40H233ATMA1

Infineon Technologies

Produkt-Nr.:

IRF40H233ATMA1

Hersteller:

Paket:

PG-TDSON-8-4

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 40V 35A 8PQFN

Menge:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	57nC @ 10V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	6.2mOhm @ 35A, 10V
Supplier Device Package	PG-TDSON-8-4
Vgs(th) (Max) @ Id	3.9V @ 50µA
Drain to Source Voltage (Vdss)	40V
Series	StrongIRFET™
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	3.8W (Ta), 50W (Tc)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Package	Tape & Reel (TR)
Base Product Number	IRF40