IRF7341TRPBFXTMA1

Infineon Technologies

Produkt-Nr.:

IRF7341TRPBFXTMA1

Hersteller:

Paket:

PG-DSO-8-902

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Datenblatt:

Beschreibung:

PLANAR 40<-<100V

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	50mOhm @ 4.7A, 10V
Supplier Device Package	PG-DSO-8-902
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	55V
Series	HEXFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Tc)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Package	Tape & Reel (TR)