IRF8910TRPBFXTMA1

Infineon Technologies

Produkt-Nr.:

IRF8910TRPBFXTMA1

Hersteller:

Paket:

PG-DSO-8-902

Charge:

Datenblatt:

Beschreibung:

TRENCH <= 40V

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Standard
Configuration	2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds	960pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	13.4mOhm @ 10A, 10V
Supplier Device Package	PG-DSO-8-902
Vgs(th) (Max) @ Id	2.55V @ 250µA
Drain to Source Voltage (Vdss)	20V
Series	HEXFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Ta)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Package	Tape & Reel (TR)