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IRLHM630TR2PBF

Infineon Technologies

Produkt-Nr.:

IRLHM630TR2PBF

Paket:

PQFN (3x3)

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 30V 21A PQFN

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 4.5V
Supplier Device Package PQFN (3x3)
Vgs(th) (Max) @ Id 1.1V @ 50µA
Drain to Source Voltage (Vdss) 30 V
Series -
Package / Case 8-VQFN Exposed Pad
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 40A (Tc)
Package Cut Tape (CT)