IRLL024NPBF-INF

Infineon Technologies

Produkt-Nr.:

IRLL024NPBF-INF

Hersteller:

Paket:

SOT-223

Charge:

Datenblatt:

Beschreibung:

HEXFET POWER MOSFET

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	15.6 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	65mOhm @ 3.1A, 10V
Supplier Device Package	SOT-223
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	55 V
Series	HEXFET®
Power Dissipation (Max)	1W (Ta)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta)
Vgs (Max)	±16V
Package	Bulk