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IRLL3303TRPBF

International Rectifier

Produkt-Nr.:

IRLL3303TRPBF

Paket:

SOT-223

Charge:

-

Datenblatt:

-

Beschreibung:

HEXFET POWER MOSFET

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 31mOhm @ 4.6A, 10V
Supplier Device Package SOT-223
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series HEXFET®
Power Dissipation (Max) 1W (Ta)
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Mfr International Rectifier
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta)
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk