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IRLR8103VPBF-IR

International Rectifier

Produkt-Nr.:

IRLR8103VPBF-IR

Paket:

TO-252AA

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 30V 91A DPAK

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2672 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V
Supplier Device Package TO-252AA
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series HEXFET®
Power Dissipation (Max) 115W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr International Rectifier
Current - Continuous Drain (Id) @ 25°C 91A (Tc)
Vgs (Max) ±20V
Package Bulk