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ISC007N04NM6ATMA1

Infineon Technologies

Produkt-Nr.:

ISC007N04NM6ATMA1

Paket:

PG-TDSON-8 FL

Charge:

-

Datenblatt:

-

Beschreibung:

TRENCH <= 40V

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 0.7mOhm @ 50A, 10V
Supplier Device Package PG-TDSON-8 FL
Vgs(th) (Max) @ Id 2.8V @ 1.05mA
Drain to Source Voltage (Vdss) 40 V
Series OptiMOS™ 6
Power Dissipation (Max) 3W (Ta), 188W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 48A (Ta), 381A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number ISC007N