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ISC0702NLSATMA1

Infineon Technologies

Produkt-Nr.:

ISC0702NLSATMA1

Paket:

PG-TDSON-8

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 60V 23A/135A TDSON-8

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : 9737

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $1.4535

    $1.4535

  • 10

    $1.20365

    $12.0365

  • 100

    $0.95779

    $95.779

  • 500

    $0.810426

    $405.213

  • 1000

    $0.687638

    $687.638

  • 2000

    $0.653258

    $1306.516

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 10V
Supplier Device Package PG-TDSON-8
Vgs(th) (Max) @ Id 2.3V @ 38µA
Drain to Source Voltage (Vdss) 60 V
Series OptiMOS™ 5
Power Dissipation (Max) 3W (Ta), 100W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 135A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number ISC0702N