IXFH66N20Q

IXYS

Produkt-Nr.:

IXFH66N20Q

Hersteller:

Paket:

TO-247AD (IXFH)

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 200V 66A TO247AD

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	40mOhm @ 33A, 10V
Supplier Device Package	TO-247AD (IXFH)
Vgs(th) (Max) @ Id	4V @ 4mA
Drain to Source Voltage (Vdss)	200 V
Series	HiPerFET™
Power Dissipation (Max)	400W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	66A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFH66