IXYS
Produkt-Nr.:
IXFN27N120SK
Hersteller:
Paket:
SOT-227B
Charge:
-
Datenblatt:
-
Beschreibung:
SICARBIDE-DISCRETE MOSFET SOT-22
Menge:
Lieferung:

Zahlung:
Bitte senden Sie RFQ, wir werden sofort antworten.

| Operating Temperature | - |
| FET Feature | - |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | - |
| Supplier Device Package | SOT-227B |
| Vgs(th) (Max) @ Id | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Series | - |
| Package / Case | SOT-227-4, miniBLOC |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Mfr | IXYS |
| Current - Continuous Drain (Id) @ 25°C | - |
| Package | Tube |
| Base Product Number | IXFN27 |