IXFN27N80

IXYS

Produkt-Nr.:

IXFN27N80

Hersteller:

Paket:

SOT-227B

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 800V 27A SOT-227B

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	400 nC @ 10 V
Mounting Type	Chassis Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	300mOhm @ 13.5A, 10V
Supplier Device Package	SOT-227B
Vgs(th) (Max) @ Id	4.5V @ 8mA
Drain to Source Voltage (Vdss)	800 V
Series	HiPerFET™
Power Dissipation (Max)	520W (Tc)
Package / Case	SOT-227-4, miniBLOC
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V, 15V
Package	Tube
Base Product Number	IXFN27