IXTB30N100L

IXYS

Produkt-Nr.:

IXTB30N100L

Hersteller:

Paket:

PLUS264™

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 1000V 30A PLUS264

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	13200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	545 nC @ 20 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	450mOhm @ 500mA, 20V
Supplier Device Package	PLUS264™
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	1000 V
Series	Linear
Power Dissipation (Max)	800W (Tc)
Package / Case	TO-264-3, TO-264AA
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	IXTB30