IXTH68P20T

IXYS

Produkt-Nr.:

IXTH68P20T

Hersteller:

Paket:

TO-247 (IXTH)

Charge:

Datenblatt:

Beschreibung:

MOSFET P-CH 200V 68A TO247

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	33400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	380 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	55mOhm @ 34A, 10V
Supplier Device Package	TO-247 (IXTH)
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	TrenchP™
Power Dissipation (Max)	568W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTH68