JANSR2N7381

Microsemi Corporation

Produkt-Nr.:

JANSR2N7381

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Paket:

TO-257

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Beschreibung:

MOSFET N-CH 200V 9.4A TO257

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 12 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	490mOhm @ 9.4A, 12V
Supplier Device Package	TO-257
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	200 V
Series	Military, MIL-PRF-19500/614
Power Dissipation (Max)	2W (Ta), 75W (Tc)
Package / Case	TO-257-3
Technology	MOSFET (Metal Oxide)
Mfr	Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C	9.4A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	12V
Package	Tray