JANTXV1N5809US

Microchip Technology

Produkt-Nr.:

JANTXV1N5809US

Hersteller:

Paket:

B, SQ-MELF

Charge:

Datenblatt:

Beschreibung:

DIODE GEN PURP 100V 3A B SQ-MELF

Menge:

Lieferung:

Zahlung:

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	30 ns
Capacitance @ Vr, F	60pF @ 10V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	B, SQ-MELF
Current - Reverse Leakage @ Vr	5 µA @ 100 V
Series	Military, MIL-PRF-19500/477
Package / Case	SQ-MELF, B
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	875 mV @ 4 A
Mfr	Microchip Technology
Voltage - DC Reverse (Vr) (Max)	100 V
Package	Bulk
Operating Temperature - Junction	-65°C ~ 175°C
Current - Average Rectified (Io)	3A
Base Product Number	1N5809