LSIC1MO120T0080-TU

IXYS

Produkt-Nr.:

LSIC1MO120T0080-TU

Hersteller:

Paket:

TO-263-7

Charge:

Datenblatt:

Beschreibung:

1200V/80MOHM SIC MOSFET TO-263-7

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

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Operating Temperature	-
FET Feature	-
FET Type	N-Channel
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	-
Supplier Device Package	TO-263-7
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	-
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiC (Silicon Carbide Junction Transistor)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	39A (Tc)
Vgs (Max)	-
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	LSIC1MO120