MCB60I1200TZ

IXYS

Produkt-Nr.:

MCB60I1200TZ

Hersteller:

Paket:

TO-268AA (D3Pak-HV)

Charge:

Datenblatt:

Beschreibung:

1200V 90A SIC POWER MOSFET

Menge:

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2790 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 20 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	34mOhm @ 50A, 20V
Supplier Device Package	TO-268AA (D3Pak-HV)
Vgs(th) (Max) @ Id	4V @ 15mA
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	-
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	SiCFET (Silicon Carbide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Vgs (Max)	+20V, -5V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	MCB60I1200