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MSCSM70TAM10CTPAG

Microchip Technology

Produkt-Nr.:

MSCSM70TAM10CTPAG

Paket:

SP6-P

Charge:

-

Datenblatt:

-

Beschreibung:

PM-MOSFET-SIC-SBD~-SP6P

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -40°C ~ 175°C (TJ)
FET Feature -
Configuration 6 N-Channel (3-Phase Bridge)
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 700V
Gate Charge (Qg) (Max) @ Vgs 430nC @ 20V
Mounting Type Chassis Mount
Product Status Active
Rds On (Max) @ Id, Vgs 9.5mOhm @ 80A, 20V
Supplier Device Package SP6-P
Vgs(th) (Max) @ Id 2.4V @ 8mA
Drain to Source Voltage (Vdss) 700V
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 674W (Tc)
Mfr Microchip Technology
Current - Continuous Drain (Id) @ 25°C 238A (Tc)
Package Tube
Base Product Number MSCSM70