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N0400P-ZK-E1-AY

Renesas Electronics America Inc

Produkt-Nr.:

N0400P-ZK-E1-AY

Paket:

TO-252

Charge:

-

Datenblatt:

-

Beschreibung:

ABU / MOSFET

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

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Auf Lager : 7498

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $1.406

    $1.406

  • 10

    $1.15045

    $11.5045

  • 100

    $0.894615

    $89.4615

  • 500

    $0.758309

    $379.1545

  • 1000

    $0.617728

    $617.728

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 40mOhm @ 7.5A, 4.5V
Supplier Device Package TO-252
Vgs(th) (Max) @ Id 1.5V @ 1mA
Drain to Source Voltage (Vdss) 40 V
Series -
Power Dissipation (Max) 1W (Ta), 25W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)