N0601N-ZK-E1-AY

Renesas Electronics America Inc

Produkt-Nr.:

N0601N-ZK-E1-AY

Hersteller:

Paket:

TO-263

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 60V 100A TO263

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	133 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	4.2mOhm @ 50A, 10V
Supplier Device Package	TO-263
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	1.5W (Ta), 156W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	N0601N-ZK-E1