NDB6060L

Fairchild Semiconductor

Produkt-Nr.:

NDB6060L

Hersteller:

Paket:

D²PAK (TO-263)

Charge:

Datenblatt:

Beschreibung:

POWER FIELD-EFFECT TRANSISTOR, 4

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Operating Temperature	-65°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	20mOhm @ 24A, 10V
Supplier Device Package	D²PAK (TO-263)
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	100W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	48A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Bulk