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NDT452AP

Fairchild Semiconductor

Produkt-Nr.:

NDT452AP

Paket:

SOT-223-4

Charge:

-

Datenblatt:

-

Beschreibung:

POWER FIELD-EFFECT TRANSISTOR, 5

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -65°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 65mOhm @ 5A, 10V
Supplier Device Package SOT-223-4
Vgs(th) (Max) @ Id 2.8V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 3W (Ta)
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk