NP100P04PDG-E1-AY

Renesas Electronics America Inc

Produkt-Nr.:

NP100P04PDG-E1-AY

Hersteller:

Paket:

TO-263

Charge:

Datenblatt:

Beschreibung:

MOSFET P-CH 40V 100A TO263

Menge:

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Zahlung:

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	15100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	320 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3.5mOhm @ 50A, 10V
Supplier Device Package	TO-263
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	40 V
Series	-
Power Dissipation (Max)	1.8W (Ta), 200W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NP100P04