minImg

NP83P04PDG-E1-AY

Renesas Electronics America Inc

Produkt-Nr.:

NP83P04PDG-E1-AY

Paket:

TO-263

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET P-CH 40V 83A TO-263

Menge:

Lieferung:

1.webp 4.webp 5.webp 2.webp 3.webp

Zahlung:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Produkt informationen

Parameter-Info

Benutzer handbuch

FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 9820 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 5.3mOhm @ 41.5A, 10V
Supplier Device Package TO-263
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 40 V
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C 83A (Tc)
Package Tape & Reel (TR)