NTBG028N170M1

onsemi

Produkt-Nr.:

NTBG028N170M1

Hersteller:

Paket:

D2PAK-7

Charge:

Datenblatt:

Beschreibung:

SIC MOSFET 1700 V 28 MOHM M1 SER

Menge:

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Zahlung:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4160 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	222 nC @ 20 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	40mOhm @ 60A, 20V
Supplier Device Package	D2PAK-7
Vgs(th) (Max) @ Id	4.3V @ 20mA
Drain to Source Voltage (Vdss)	1700 V
Series	-
Power Dissipation (Max)	428W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	71A (Tc)
Vgs (Max)	+25V, -15V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tape & Reel (TR)
Base Product Number	NTBG028