NTMT095N65S3H

onsemi

Produkt-Nr.:

NTMT095N65S3H

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Paket:

4-TDFN (8x8)

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Datenblatt:

Beschreibung:

POWER MOSFET, N-CHANNEL, SUPERFE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2833 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	95mOhm @ 15A, 10V
Supplier Device Package	4-TDFN (8x8)
Vgs(th) (Max) @ Id	4V @ 2.8mA
Drain to Source Voltage (Vdss)	650 V
Series	SuperFET® III
Power Dissipation (Max)	208W (Tc)
Package / Case	4-PowerTSFN
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)