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NTP082N65S3F

Fairchild Semiconductor

Produkt-Nr.:

NTP082N65S3F

Paket:

TO-220-3

Charge:

-

Datenblatt:

-

Beschreibung:

NTP082N65S3F - POWER MOSFET, N-C

Menge:

Lieferung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3410 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 82mOhm @ 20A, 10V
Supplier Device Package TO-220-3
Vgs(th) (Max) @ Id 5V @ 1mA
Drain to Source Voltage (Vdss) 650 V
Series FRFET®, SuperFET® II
Power Dissipation (Max) 313W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk