NTTFS115P10M5

onsemi

Produkt-Nr.:

NTTFS115P10M5

Hersteller:

Paket:

8-WDFN (3.3x3.3)

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Datenblatt:

Beschreibung:

MV5_100V_N_P_IN DUALS AND SINGLE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	637 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	9.2 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	120mOhm @ 2.4A, 10V
Supplier Device Package	8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id	4V @ 45µA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	900mW (Ta), 41W (Tc)
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	2A (Ta), 13A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)