NTZS3151PT1G

Rochester Electronics, LLC

Produkt-Nr.:

NTZS3151PT1G

Hersteller:

Paket:

SOT-563

Charge:

Datenblatt:

Beschreibung:

NTZS3151P - MOSFET P-CHANNEL SIN

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	458 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs	5.6 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	150mOhm @ 950mA, 4.5V
Supplier Device Package	SOT-563
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	170mW (Ta)
Package / Case	SOT-563, SOT-666
Technology	MOSFET (Metal Oxide)
Mfr	Rochester Electronics, LLC
Current - Continuous Drain (Id) @ 25°C	860mA (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Bulk