NVTFS9D6P04M8L

onsemi

Produkt-Nr.:

NVTFS9D6P04M8L

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Paket:

8-WDFN (3.3x3.3)

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Datenblatt:

Beschreibung:

MOSFET P-CH 20V 8-SOIC

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2312 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	34.6 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9.5mOhm @ 20A, 10V
Supplier Device Package	8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id	2.4V @ 580µA
Drain to Source Voltage (Vdss)	40 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	3.2W (Ta), 75W (Tc)
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 64A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NVTFS9