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PHK04P02T,518

Nexperia USA Inc.

Produkt-Nr.:

PHK04P02T,518

Hersteller:

Nexperia USA Inc.

Paket:

8-SO

Charge:

-

Datenblatt:

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Beschreibung:

MOSFET P-CH 16V 4.66A 8SO

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 528 pF @ 12.8 V
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 4.5V
Supplier Device Package 8-SO
Vgs(th) (Max) @ Id 600mV @ 1mA (Typ)
Drain to Source Voltage (Vdss) 16 V
Series -
Power Dissipation (Max) 5W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C 4.66A (Tc)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)