PHU101NQ03LT,127

NXP USA Inc.

Produkt-Nr.:

PHU101NQ03LT,127

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Paket:

I-Pak

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Beschreibung:

MOSFET N-CH 30V 75A IPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 5 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	5.5mOhm @ 25A, 10V
Supplier Device Package	I-Pak
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchMOS™
Power Dissipation (Max)	166W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tube
Base Product Number	PHU10