PJQ1906_R1_00201

Panjit International Inc.

Produkt-Nr.:

PJQ1906_R1_00201

Hersteller:

Paket:

DFN1006-3

Charge:

Datenblatt:

Beschreibung:

20V N-CHANNEL ENHANCEMENT MODE M

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	0.9 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.2Ohm @ 300mA, 4.5V
Supplier Device Package	DFN1006-3
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	700mW (Ta)
Package / Case	3-UFDFN
Technology	MOSFET (Metal Oxide)
Mfr	Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	PJQ1906