PMT560ENEAX

NXP Semiconductors

Produkt-Nr.:

PMT560ENEAX

Hersteller:

Paket:

SOT-223

Charge:

Datenblatt:

Beschreibung:

NEXPERIA PMT560ENEA - 100V N-CHA

Menge:

Lieferung:

Zahlung:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	112 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	4.4 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	715mOhm @ 1.1A, 10V
Supplier Device Package	SOT-223
Vgs(th) (Max) @ Id	2.7V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	750mW (Ta)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk