PMWD19UN,518

NXP USA Inc.

Produkt-Nr.:

PMWD19UN,518

Hersteller:

Paket:

8-TSSOP

Charge:

Datenblatt:

Beschreibung:

MOSFET 2N-CH 30V 5.6A 8TSSOP

Menge:

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1478pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	28nC @ 5V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	23mOhm @ 3.5A, 4.5V
Supplier Device Package	8-TSSOP
Vgs(th) (Max) @ Id	700mV @ 1mA
Drain to Source Voltage (Vdss)	30V
Series	TrenchMOS™
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	2.3W
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	5.6A
Package	Tape & Reel (TR)
Base Product Number	PMWD19