PSMN9R8-100YSFX

Nexperia USA Inc.

Produkt-Nr.:

PSMN9R8-100YSFX

Hersteller:

Paket:

LFPAK56, Power-SO8

Charge:

Datenblatt:

Beschreibung:

NEXTPOWER 80/100V MOSFETS

Menge:

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Zahlung:

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3384 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	50.4 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	10.2mOhm @ 20A, 10V
Supplier Device Package	LFPAK56, Power-SO8
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	147W (Ta)
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	80A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)