QS8J11TCR

Rohm Semiconductor

Produkt-Nr.:

QS8J11TCR

Hersteller:

Paket:

TSMT8

Charge:

Datenblatt:

Beschreibung:

MOSFET 2P-CH 12V 3.5A TSMT8

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

Bitte senden Sie RFQ, wir werden sofort antworten.

Name des Kontakts

E-Mail

Firmenname

Land

Menge

Operating Temperature	150°C (TJ)
FET Feature	Logic Level Gate, 1.5V Drive
Configuration	2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	22nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	43mOhm @ 3.5A, 4.5V
Supplier Device Package	TSMT8
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	12V
Series	-
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Power - Max	550mW
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	3.5A
Package	Tape & Reel (TR)
Base Product Number	QS8J11