R6014YNX3C16

Rohm Semiconductor

Produkt-Nr.:

R6014YNX3C16

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Paket:

TO-220AB

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Beschreibung:

NCH 600V 14A, TO-220AB, POWER MO

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	260mOhm @ 5A, 12V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	6V @ 1.4mA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	132W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V, 12V
Package	Tube
Base Product Number	R6014