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RJK0353DPA-WS#J0B

Renesas Electronics America Inc

Produkt-Nr.:

RJK0353DPA-WS#J0B

Paket:

WPAK(3F) (5x6)

Charge:

-

Datenblatt:

-

Beschreibung:

MOSFET N-CH 30V 35A WPAK

Menge:

Lieferung:

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Zahlung:

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 5.2mOhm @ 17.5A, 10V
Supplier Device Package WPAK(3F) (5x6)
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 40W (Ta)
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Mfr Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C 35A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk