RJK03E3DNS-00#J5

Renesas Electronics America Inc

Produkt-Nr.:

RJK03E3DNS-00#J5

Hersteller:

Paket:

8-HWSON (3.3x3.3)

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 30V 14A 8HWSON

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Auf Lager : Bitte Anfrage

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1050 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	5.7 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	11.6mOhm @ 7A, 10V
Supplier Device Package	8-HWSON (3.3x3.3)
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	10W (Tc)
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	14A (Ta)
Package	Bulk