RJK2009DPM-00#T0

Renesas Electronics America Inc

Produkt-Nr.:

RJK2009DPM-00#T0

Hersteller:

Paket:

TO-3PFM

Charge:

Datenblatt:

Beschreibung:

MOSFET N-CH 200V 40A TO3PFM

Menge:

Lieferung:

Zahlung:

Auf Lager : Bitte Anfrage

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Operating Temperature	-
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	36mOhm @ 20A, 10V
Supplier Device Package	TO-3PFM
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	200 V
Series	-
Power Dissipation (Max)	60W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	RJK2009