Renesas Electronics America Inc
Produkt-Nr.:
RJM0603JSC-00#13
Hersteller:
Paket:
20-HSOP
Charge:
-
Datenblatt:
-
Beschreibung:
MOSFET 3N/3P-CH 60V 20A HSOP
Menge:
Lieferung:

Zahlung:
Bitte senden Sie RFQ, wir werden sofort antworten.

| Operating Temperature | 175°C |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Configuration | 3 N and 3 P-Channel (3-Phase Bridge) |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V |
| Supplier Device Package | 20-HSOP |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain to Source Voltage (Vdss) | 60V |
| Series | Automotive, AEC-Q101 |
| Package / Case | 20-SOIC (0.433", 11.00mm Width) Exposed Pad |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 54W |
| Mfr | Renesas Electronics America Inc |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Package | - |
| Base Product Number | RJM0603 |