Toshiba Semiconductor and Storage
Produkt-Nr.:
RN2901FE(TE85L,F)
Hersteller:
Paket:
ES6
Charge:
-
Datenblatt:
-
Beschreibung:
TRANS 2PNP PREBIAS 0.1W ES6
Menge:
Lieferung:

Zahlung:
Minimum: 1 Vielfache: 1
Menge
Stückpreis
Ext-Preis
1
$0.3325
$0.3325
10
$0.23085
$2.3085
100
$0.116375
$11.6375
500
$0.094981
$47.4905
1000
$0.070462
$70.462
2000
$0.05928
$118.56
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| Frequency - Transition | 200MHz |
| Current - Collector (Ic) (Max) | 100mA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Resistor - Base (R1) | 4.7kOhms |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Supplier Device Package | ES6 |
| Series | - |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Package / Case | SOT-563, SOT-666 |
| Power - Max | 100mW |
| Mfr | Toshiba Semiconductor and Storage |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Package | Tape & Reel (TR) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Base Product Number | RN2901 |