RS1E300GNTB

Rohm Semiconductor

Produkt-Nr.:

RS1E300GNTB

Hersteller:

Paket:

8-HSOP

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Beschreibung:

MOSFET N-CH 30V 30A 8-HSOP

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	39.8 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	2.2mOhm @ 30A, 10V
Supplier Device Package	8-HSOP
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	3W (Ta), 33W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	30A (Ta), 80A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RS1E