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RS3E135BNGZETB

Rohm Semiconductor

Produkt-Nr.:

RS3E135BNGZETB

Hersteller:

Rohm Semiconductor

Paket:

8-SOP

Charge:

-

Datenblatt:

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Beschreibung:

MOSFET N-CHANNEL 30V 9.5A 8SOP

Menge:

Lieferung:

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Zahlung:

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Auf Lager : 2565

Minimum: 1 Vielfache: 1

Menge

Stückpreis

Ext-Preis

  • 1

    $0.9785

    $0.9785

  • 10

    $0.80275

    $8.0275

  • 100

    $0.624625

    $62.4625

  • 500

    $0.529454

    $264.727

  • 1000

    $0.4313

    $431.3

Nicht der Preis, den Sie wollen? Senden Sie jetzt RFQ und wir werden Sie so schnell wie möglich kontaktieren.

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Produkt informationen

Parameter-Info

Benutzer handbuch

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 14.6mOhm @ 9.5A, 10V
Supplier Device Package 8-SOP
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 2W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number RS3E