RT1E040RPTR

Rohm Semiconductor

Produkt-Nr.:

RT1E040RPTR

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Paket:

8-TSST

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Beschreibung:

MOSFET P-CH 30V 4A 8TSST

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	45mOhm @ 4A, 10V
Supplier Device Package	8-TSST
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	550mW (Ta)
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	RT1E040