SCT1000N170

STMicroelectronics

Produkt-Nr.:

SCT1000N170

Hersteller:

Paket:

HiP247™

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Beschreibung:

HIP247 IN LINE

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Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	133 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	13.3 nC @ 20 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	1.3Ohm @ 3A, 20V
Supplier Device Package	HiP247™
Vgs(th) (Max) @ Id	3.5V @ 1mA
Drain to Source Voltage (Vdss)	1700 V
Series	-
Power Dissipation (Max)	96W (Tc)
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	SCT1000