SCT2120AFC

Rohm Semiconductor

Produkt-Nr.:

SCT2120AFC

Hersteller:

Paket:

TO-220AB

Charge:

Datenblatt:

Beschreibung:

SICFET N-CH 650V 29A TO220AB

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 18 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	156mOhm @ 10A, 18V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	4V @ 3.3mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	165W (Tc)
Package / Case	TO-220-3
Technology	SiCFET (Silicon Carbide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Vgs (Max)	+22V, -6V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT2120